2013年7月31日星期三

neodymium-doped lanthanum barium borate two laser crystal and its preparation method and use


578701640166 gadolinium borate, strontium laser crystal and method
578 701 350 167 Characteristics of a growth of large diameter having a semiconductor single crystal apparatus and a method 6HSiC
578700140168 space solution in situ real-time observation of crystal growth apparatus
578 701 010 169 Zinc Oxide semiconductor thin metal organic vapor phase deposition apparatus
578 700 460 170 sodium barium niobate single crystal columnar particle production process
578702000171 a growth heavily doped Czochralski method and doped device
578701500172 achieve Gd2 (MoO4)
578701590173 relaxor ferroelectric single crystals of lead zinc niobate lead titanate-step growth method
578700060174 crystal growth processes in the seed crystal orientation control method and its special fixtures
578701800175 cerium-doped lutetium disilicate method for preparing hot flashes monocrystal
578701860176 terbium type paramagnetic garnet single crystal and magneto-optical devices
578700290177 vacancy dominated silicon is used to control the thermal process method
578700130178 near-stoichiometric lithium niobate crystal growth method
578701650179 neodymium-doped yttrium borate, strontium laser crystal and method
578700020180 has a magnetic induction of high strain and shape memory effect of the magnetic crystal and preparation method
578 701 230 181 through the channel region with respect to the micro-structure to improve perceived offset between the polycrystalline thin film transistor device uniformity ...
578700300182 giant magnetostrictive material-step preparation process and equipment and preparation of products
578701580183 cerium-doped yttrium aluminate crystal growth method
578 701 690 184 wafers per hour wafer processing furnace capacity parameter monitoring systems and monitoring methods
578700180185 rapid synthesis of new method of basic Molybdenum crucible sulfate whisker
578701270186 one kind of periodically poled crystal growth method
578 700 820 187 Overall obtained gallium-containing nitride crystal of a method and apparatus
578701900188 nearly stoichiometric lithium niobate Preparation
578700920189 c-axis oriented thin film lithium niobate preparation
578701400190 Preparation of magnesium borate whisker
578700350191 one kind of tellurium dioxide single crystals grown by Bridgman technique
578701630192 neodymium-doped strontium gadolinium scandium borate laser crystal and method
578701980193 A nonlinear optical crystal aluminum borate, potassium and sodium and its preparation and use
578701670194 neodymium-doped lanthanum vanadate laser crystal and method
578700310195 one kind Czochralski monocrystalline silicon seed crystal holder
578701850196 Ⅲ Ⅴ nitride-based semiconductor substrate and a manufacturing method
578701100197 one kind of SiC single crystal growth pressure automatic control device
578700570198 Czochralski crystal growth apparatus
578 701 130 199 one kinds of the ceramic substrate, depositing a polycrystalline thin film of large grain
578701250200 casting speed by controlling the distribution of monocrystalline silicon ingots and wafers manufacturing methods and products
578 700 960 201 high surface quality of the GaN wafer and production method thereof
578702010202 large boron phosphate nonlinear optical crystal growth method and its use molten salt
578702030203 a purely static double heating temperature gradient technique crystal growth apparatus

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