A method for optically measuring diameter GaAs single crystal growth method

578701680055 one kind of preparation method of zinc oxide whisker
578701720056 a seed crystal starting end grain formation and growth inhibition of complex methods and mold shell structure
578700190057 spherical cap shaped crystal growth method
578 700 760 058 Preparation of sheet-like ZnO single crystals
578700040059 neodymium-doped yttrium-barium borate laser crystal and its preparation method and use
578 700 730 060 of a laser recrystallization method
578 700 170 061 The method of reducing the crystal defect density
Prepared by Chemical Precipitation 578700340062 cuprous oxide nanoparticles stabilized approach whisker
578701420063 band output 2μm thulium-doped yttrium aluminate laser crystal and its preparation process
578700950064 for the Molybdenum tube of complex shapes single crystal structure component method
578 701 390 065 Zinc oxide self-assembled three-dimensional photonic crystal preparation
578701120066 shaped tungsten carbide single crystal granule preparation method
Rare earth oxide 578 701 790 067 crystal growth method thio
578701660068 neodymium-doped lanthanum strontium borate laser crystal and method
578 700 540 069 for the metal fluoride single crystal pulling apparatus
578701450070 oxide high-temperature superconductors and method
578700320071 silicon single crystal grown by Czochralski silicon seed and processing methods
578700560072 alkaline earth metal fluoride crystal to generate state
578 700 400 073 by chemical vapor deposition of an epitaxial layer grown on the wafer without pedestal reactor
578700930074 improve lithium potassium niobate wafer method of lithium content
578 701 040 075 with solid supports, and the resistivity of the carbon-doped control, and control of the temperature gradient method to grow semiconductor crystals and apparatus
578701940076 melt pulling calcium borate crystal growth method
578700810077 improve lithium aluminate and lithium gallate integrity of the wafer surface lattice method
578 700 910 078 method and apparatus for producing a silicon single crystal, silicon and silicon semiconductor wafers
578701750079 melt injection method grown nearly stoichiometric lithium niobate crystal system and process
578 701 370 080 for eight inches heavily doped arsenic Czochralski made ​​upper thermal field
578701140081 using atmospheric open metal-organic chemical vapor deposition oxide one-dimensional array of material method and apparatus
578700630082 monocrystalline silicon and production methods